收藏本站
6. Write Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a “0” and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a “0”. The addressing device, such as a microcontroller, must
then terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally-timed write cycle, t WR , to the nonvolatile memory. All inputs are disabled during this
write cycle and the EEPROM will not respond until the write is complete (see Figure 6-1 ).
Figure 6-1.
Byte Write
Note:
* = DON’T CARE bit
PAGE WRITE: The 256K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The
EEPROM will respond with a “0” after each data word received. The microcontroller must termi-
nate the page write sequence with a stop condition (see Figure 6-2 ).
Figure 6-2.
Page Write
Note:
* = DON’T CARE bit
The data word address lower six bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the fol-
lowing byte is placed at the beginning of the same page. If more than 64 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the last byte of the current page to the
first byte of the same page.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a “0”, allowing the read or write sequence to continue.
10
AT24C256B
5279C–SEEPR–3/09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
AT24C256C-XHL-B IC EEPROM 256KBIT IND 8TSSOP
AT24C32AY6-10YH-1.8 IC EEPROM 32KBIT 400KHZ 8DFN
AT24C512BY7-YH25-T IC EEPROM 512KBIT 1MHZ 8SAP
AT24C512W-10SU-1.8 IC EEPROM 512KBIT 400KHZ 8SOIC
AT24C64B-10TU-1.8 IC EEPROM 64KBIT 400KHZ 8TSSOP
AT24C64CY6-YH-T IC EEPROM 64KBIT 1MHZ 8MLP
AT24C64W-10SI-1.8 IC EEPROM 64KBIT 400KHZ 8SOIC
AT24HC02B-TH-B IC EEPROM 2KBIT 1MHZ 8TSSOP
相关代理商/技术参数
AT24C256BY1-10YU-1.8 功能描述:电可擦除可编程只读存储器 8 MAP 1.8V - 8 MAP 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT24C256BY7-YH-T 制造商:Atmel Corporation 功能描述:EEPROM Serial-2Wire 256K-Bit 32K x 8 2.5V/3.3V/5V 8-Pin UTSAP EP T/R
AT24C256C-CUL-B 制造商:Atmel Corporation 功能描述:SERIAL EEPROM, 256K (32K X 8) - Bulk
AT24C256C-CUL-T 制造商:Atmel Corporation 功能描述:
AT24C256C-MAHL-T 功能描述:电可擦除可编程只读存储器 256K (32K X 8) 2-WI 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT24C256C-MAHL-T SL901 制造商:Atmel Corporation 功能描述:IC EEPROM 256KBIT 1MHZ 8UDFN
AT24C256C-SSHL-B 功能描述:电可擦除可编程只读存储器 256K (32K X 8), 2-WI 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT24C256C-SSHL-T 功能描述:电可擦除可编程只读存储器 256K (32K X 8), 2-WI 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8